Molybdenum (Mo) Back Metallization
Sputtering in a large area coater provides the perfect platform for Mo films. The growth of optimum grains provides the desired conductivities while achieving a film robust to corrosive processing environments. Conductivities of less than 0.5 ohms/square are achieved.
- Columnar grain growth has well-defined grains resulting in optimum conductivity.
- Multi-layer Mo products can be tuned to control the level of Na available or blocked from device.
- Mo of multi-layered stress level to control bulk thin film product stress and adhesion.
TEM cross-section images reveal the continual growth of crystals upward to a film thickness of 0.5 microns. These large columnar crystals are required to obtain optimally low conductivity.
The top view of the molybdenum grains as shown in this SEM are approximately 100 nm x 20 nm. In contrast to TEM, SEM reveals a larger area to obtain uniformity or consistency of crystals.